| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with high luminous efficiency and high light-extraction efficiency. <P>SOLUTION: A semiconductor light-emitting element comprises a light-emitting layer, a light-transmitting layer, a first nitride semiconductor layer, and a second nitride semiconductor layer. The light-emitting layer includes an active layer of a nitride semiconductor. The light-transmitting layer has translucency to the light emitted from the light-emitting layer, is composed of silicon oxide or silicon oxide to which any element is added, and is amorphous. The first nitride semiconductor layer contacts the light-transmitting layer between the light-emitting layer and the light-transmitting layer. The first nitride semiconductor layer has a larger thermal expansion coefficient than the light-transmitting layer, has a smaller lattice constant than the active layer, has tensile stress in an in-plane direction, and has a first conductivity type. The second nitride semiconductor layer is provided on the surface of the light-emitting layer opposite to the surface on which the light-transmitting layer is provided, and has a second conductivity type. <P>COPYRIGHT: (C)2012,JPO&INPIT |
