Power devices with improved breakdown voltages

摘要

A power device includes a semiconductor substrate (1) of first conductivity having an upper surface (3) and a lower surface (4). An isolation diffusion region (2) of second conductivity is provided at a periphery of the substrate (1) and extends from the upper surface (3) to the lower surface (4) of the substrate (1). The isolation diffusion region (2) has a first surface corresponding to the upper surface (3) of the substrate (1) and a second surface corresponding to the lower surface (4). A peripheral junction region (9) of second conductivity is formed at least partly within the isolation diffusion region (2) and formed proximate the first surface of the isolation diffusion region. First and second terminals (7,16) are provided.