| 摘要 |
A method of making a semiconductor device comprising: providing a semiconductor wafer having a semiconductor layer (210); forming a first mask layer (220) over the semiconductor layer; forming a first metal layer (225) over the first mask layer; forming a second metal layer (230) over the first metal layer, the first metal layer having a lower melting point than the second metal layer; annealing the second metal layer to form islands (231); and etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars. |
