| 摘要 |
A mask comprises a channel region half-exposure mask structure, a drain mask structure, and a source mask structure, wherein the channel region half-exposure mask structure comprises a channel region peripheral half-exposure mask structure, which extends from a portion that corresponds to a channel region of the TFT and is outside the portion. According to the present invention, problems such as a connection of the source/drain and a disconnection of the active layer in the channel region can be effectively prevented. |
