INSULATING LAYER FORMING METHOD USING ICVD PROCESS

摘要

The present invention relates to a method for forming an insulating film using an iCVD process. More specifically, a method for manufacture an insulating film in an organic thin film transistor according to the present invention comprises the steps of forming a free radical by pyrolyzing an initiator by heat injected in the organic thin film transistor; using the free radical to activate a monomer and chain polymerization reacting the monomer to form a polymer; and depositing the polymer in the organic thin film transistor to form a polymeric insulating film. According to the present invention, the iCVD process has effects of resolving a weakness of narrowing the manufacturing width of the insulating film manufactured in a PECVD process or a CVD process, allowing uniform deposition relatively to the existing process and having an excellent electric characteristic and a high manufacturing yield of an element through a high insulating rate by showing very low leakage currents in various thicknesses. Furthermore, the present invention can deposit the targeted polymeric insulating film by the monomer and the initiator under weather condition without using a solvent, in particular, an organic solvent, thereby preventing a deposition medium from being damaged due to the solvent. [Reference numerals] (S200) Step of supplying a monomer and an initiator; (S210) Step of injecting heat; (S220) Step of forming a free radical; (S230) Step of forming a polymer; (S240) Step of forming a polymeric insulating film