| 摘要 |
A semiconductor device includes a first semiconductor element (10); a second semiconductor element (20) that faces a same direction as the first semiconductor element, and in which a same-side surface that is a surface on a same side as one surface of the first semiconductor element is provided so as to be substantially flush with the one surface of the first semiconductor element; a first thick plate portion (31) that is electrically connected to the one surface of the first semiconductor element, and that is formed by a conductor; a second thick plate portion (32) that is electrically connected to the same-side surface of the second semiconductor element, and that is formed by a conductor; a third thick plate portion (41) that is electrically connected to a surface on a side opposite the one surface of the first semiconductor element, and that is formed by a conductor; a fourth thick plate portion (42) that is electrically connected to a surface on a side opposite the same-side surface of the second semiconductor element, and that is formed by a conductor; a first thin plate portion (33) that is formed by a conductor that is thinner than the first thick plate portion and the second thick plate portion, and that is electrically connected to the first thick plate portion and the second thick plate portion; and a second thin plate portion (43) that is formed by a conductor that is thinner than the third thick plate portion (41) and the fourth thick plate portion (42), and that is electrically connected to the third thick plate portion and the fourth thick plate portion (42). |
