| 摘要 |
<p>The invention relates to a FinFET or a planar FET device comprising a semiconductor substrate (1), a strain-relaxed buffer layer (2) comprising Ge, a strained quantum barrier layer (4) comprising SiGe and a channel layer (5), wherein the strained quantum barrier layer is positioned in between the strain relaxed buffer layer and the channel layer and in physical contact with both, and wherein the compositions of the strain-relaxed buffer layer, the strained quantum barrier layer and the channel layer are chosen such that a band offset of the channel layer and a band offset of the strained quantum barrier layer with respect to the strain-relaxed buffer layer are of opposite signs, thereby creating a quantum well effect in a conduction band structure for a n-type device and, respectively, in a valence band structure for a p-type device, thereby improving carrier confinement in the channel.</p> |
