| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a back-illuminated CMOS solid-state image sensor, which increases antireflection efficiency to allow improvement in sensitivity, while reducing shading and mixing of colors in neighboring pixels, and also to provide a camera module and an electronic equipment module with the solid-state image sensor. <P>SOLUTION: The solid-state image sensor includes: a semiconductor substrate 32; a pixel separation region 33 constituted of a semiconductor region extended from the surface to the backside of the semiconductor substrate 32; a pixel formed in each pixel area separated from the pixel separation region 33 and constituted of a photoelectron conversion part 34 extending in the front face side to the back face side of the semiconductor substrate 32 and a plurality of transistors present in the front face side of the semiconductor substrate; a plurality of layers of wiring 39 formed through an interlayer dielectric 38 on the front face of the semiconductor substrate 32; an antireflection film 41 formed on the back face which is to become a light irradiation surface of the semiconductor substrate 32; and a color filter 42 and an on-chip lens 43 laminated on the antireflection film 41 or optionally the on-chip lens 43 formed on the antireflection film 41. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
