| 摘要 |
<p>A piezoelectric device having resonance characteristics which are not degraded even if an interlayer for bonding is provided between a piezoelectric thin film and a support member and a method for manufacturing the piezoelectric device are provided. After an ion implanted portion is formed in a piezoelectric single crystal substrate (1) by implantation of hydrogen ions, an interlayer (32) of a metal is formed on a rear surface (12) the piezoelectric single crystal substrate (1). In addition, a support member (30) is bonded to the piezoelectric single crystal substrate (1) with this interlayer (32) interposed therebetween. A composite piezoelectric body (2) in which the ion implanted portion is formed or a composite piezoelectric substrate (3) obtained by heat separation of the piezoelectric single crystal substrate (1) is heated at 450°C to 700°C to oxidize the metal of the interlayer, so that the conductivity thereof is decreased. Accordingly, since the interlayer of a metal is formed, the piezoelectric substrate and the support member can be reliably adhered to each other, and since the metal of the interlayer is oxidized, the conductivity of the interlayer can be decreased, so that a piezoelectric device having excellent resonance characteristics can be provided.</p> |
