| 摘要 |
1,211,499. Etching. STANDARD TELEPHONES & CABLES Ltd. 7 March. 1969. No. 12226/69. Heading B6J. [Also in Division H1] A semi-conductor body containing a PN junction is etched with an etchant which selectively attacks N-type material, so that the extent of the etching process is defined by the position of the PN junction. For Si a suitable etchant is a solution of a diamine (e.g. ethylene diamine, hydrazene diamine or propylene diamine), catechol or a derivative thereof which forms a complex with Si (e.g. 1,2 hydroxy 4-methylbenzene) and water. The composition of a preferred solution is specified. |
