发明名称 |
Semiconductor light emitting devices including current spreading layers |
摘要 |
III-nitride or III-phosphide light emitting devices include a light emitting region disposed between a p-type region and an n-type region. At least one heavily doped layer is disposed within either the n-type region or the p-type region or both, to provide current spreading. |
申请公布号 |
EP1560275(A3) |
申请公布日期 |
2014.02.26 |
申请号 |
EP20050100249 |
申请日期 |
2005.01.17 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY LLC |
发明人 |
SUN, DECAI |
分类号 |
H01L33/14;H01L33/02;H01L33/30;H01S5/042 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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