Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure

摘要

Provided is a method of manufacturing a semiconductor device. The method includes preparing a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlxInyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes AlxInyGa1-x-yN (0≤x<1, 0≤y<1, 0≤x+y<1), and has a lattice constant LP2 that is greater than LP1 and smaller than LP0. The third layer is formed on the second layer, includes AlxInyGa1-x-yN (0≤x<1, 0≤y<1, 0≤x+y<1), and has a lattice constant LP3 that is smaller than LP2.