发明名称 A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
摘要 The embodiment includes a step of forming lower electrodes on a substrate, a step of forming a first stop layer on the lower electrodes, a step of forming a filling layer on the first stop layer, a step of forming a second stop layer on the filling layer, a step of forming a first interlayer dielectric on the second stop layer, a step of forming upper electrodes on the first interlayer dielectric, a step of forming a second interlayer dielectric on the upper electrodes, a step of forming a cavity by etching the first and the second interlayer dielectric, and a step of forming a contact ball in the cavity.
申请公布号 KR101366554(B1) 申请公布日期 2014.02.26
申请号 KR20120104397 申请日期 2012.09.20
申请人 DONGBU HITEK CO., LTD. 发明人 JEONG, SEONG HUN;YUN, KI JUN;JUNG, OH JIN
分类号 H01L29/00 主分类号 H01L29/00
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