| 发明名称 |
Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s) |
| 摘要 |
A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal. |
| 申请公布号 |
US8658523(B2) |
申请公布日期 |
2014.02.25 |
| 申请号 |
US20100878930 |
申请日期 |
2010.09.09 |
| 申请人 |
FAULKNER CARL M.;CONNELLY DANIEL J.;CLIFTON PAUL A.;GRUPP DANIEL E.;ACORN TECHNOLOGIES, INC. |
发明人 |
FAULKNER CARL M.;CONNELLY DANIEL J.;CLIFTON PAUL A.;GRUPP DANIEL E. |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
