发明名称 |
Semiconductor power device integrated with ESD protection diodes |
摘要 |
A semiconductor power device integrated with ESD protection diode is disclosed by offering a dopant out-diffusion suppression layers prior to source dopant activation or diffusion to enhance ESD protection capability between gate and source. |
申请公布号 |
US8658492(B2) |
申请公布日期 |
2014.02.25 |
申请号 |
US201213542753 |
申请日期 |
2012.07.06 |
申请人 |
HSIEH FU-YUAN;FORCE MOS TECHNOLOGY CO., LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|