| 发明名称 |
Control fin heights in FinFET structures |
| 摘要 |
A device includes a substrate, an isolation region at a top surface of the substrate, and a semiconductor fin over the isolation region. The semiconductor fin has a fin height smaller than about 400 Å, wherein the fin height is measured from a top surface of the semiconductor fin to a top surface of the isolation region. |
| 申请公布号 |
US8659097(B2) |
申请公布日期 |
2014.02.25 |
| 申请号 |
US201213351135 |
申请日期 |
2012.01.16 |
| 申请人 |
MOR YI-SHIEN;CHEN HSIAO-CHU;CHIANG MU-CHI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
MOR YI-SHIEN;CHEN HSIAO-CHU;CHIANG MU-CHI |
| 分类号 |
H01L27/088;H01L29/78 |
主分类号 |
H01L27/088 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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