| 摘要 |
According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material. |
