| 摘要 |
In a device having an anode electrode, an organic EL layer, and a cathode electrode formed on a substrate in this order from a main surface side of the substrate, and an encapsulating film provided on the substrate so as to cover the emission layer, the encapsulating film includes a laminated film obtained by alternately laminating buffer films serving as flattening films and barrier films having high moisture barrier property, and the flattening film and the barrier film include a silicon oxynitride film. In the manufacturing process of the device, the buffer film including silicon oxynitride is formed by an optical CVD method using vacuum ultraviolet light, and in this process, radical irradiation by remote plasma is performed during the irradiation of the vacuum ultraviolet light. |
