| 摘要 |
A memory system according to the embodiment comprises a cell array including cell units having p or more physical quantity levels (p is a prime of 3 or more); a code generator unit operative to convert binary-represented input data to a write code represented by elements in Zp that is a residue field modulo p; and a code write unit operative to write the write code in the cell unit in accordance with the association of the elements in Zp to different physical quantity levels, wherein the input data is recorded in (p-1) cell units, the (p-1) cell units including no cell unit that applies the same physical quantity level for write in the case where the input data is 0 and for write in the case where only 1 bit is 1. |
