发明名称 |
Low temperature P+ polycrystalline silicon material for non-volatile memory device |
摘要 |
A method of forming a non-volatile memory device. The method includes providing a substrate having a surface region and forming a first dielectric material overlying the surface region of the substrate. A first electrode structure is formed overlying the first dielectric material and a p+ polycrystalline silicon germanium material is formed overlying the first electrode structure. A p+ polycrystalline silicon material is formed overlying the first electrode structure using the polycrystalline silicon germanium material as a seed layer at a deposition temperature ranging from about 430 Degree Celsius to about 475 Degree Celsius without further anneal. The method forms a resistive switching material overlying the polycrystalline silicon material, and a second electrode structure including an active metal material overlying the resistive switching material. |
申请公布号 |
US8658476(B1) |
申请公布日期 |
2014.02.25 |
申请号 |
US201213452657 |
申请日期 |
2012.04.20 |
申请人 |
SUN XIN;JO SUNG HYUN;KUMAR TANMAY;CROSSBAR, INC. |
发明人 |
SUN XIN;JO SUNG HYUN;KUMAR TANMAY |
分类号 |
H01L21/20;H01L21/82;H01L27/112;H01L29/04;H01L29/06;H01L29/10 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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