METHOD FOR MANUFACTURING NITRIDE LIGHT EMITTING DIODE

摘要

The present invention relates to a manufacturing method of a nitride light emitting diode. The objective of the present invention is to provide a manufacturing method of a nitride light emitting diode capable of enabling the growth of an excellent GaN thin film and self-controlling the strain without an additional structure by forming a bump structure on the surface of a substrate using a Si substrate with a [110] or [100] crystal direction and by making the surface of the formed (30) structure to have a [111] crystal direction. To do so, the present invention includes: a step of depositing a mask on top of a Si substrate having a [110] crystal direction; a step of forming a mask pattern on the substrate by performing photo-resist patterning and dry etching; a step of forming a bump structure the lateral side of which has a [111] crystal direction by anisotropic-wet-etching the substrate; a step of growing an AIN buffer layer on the surface of the bump structure and on top of the substrate; a step of growing an initial GaN thin film in the lateral direction ([111] crystal direction) of the bump structure; a step of, if the grown GaN thin films are merged to each other, suppressing the growth in the lateral direction and performing a GaN thin film flat growing process to grow a GaN thin film in the vertical direction.