| 摘要 |
PURPOSE: A melt gap control system and a silicon single crystal growing apparatus including the same are provided to secure the uniform quality of a silicon single crystal ingot by accurately monitoring a melt gap in real time. CONSTITUTION: A crucible (120) receives silicon melt which is melted at high temperatures. A crucible lifting unit (127) lifts or drops the crucible. A thermal shield (160) blocks radiant heat which is inputted to a silicon single crystal ingot grown from the silicon melt. A sensor (200) is located on the lower side of the thermal shield and senses the level of the silicon melt. The sensor includes a variable resistor (210) and a level measuring tube (220). A control unit controls the rising and falling of the crucible according to the level of the silicon melt which is sensed by the sensor. |
