发明名称 CBRAM/ReRAM with improved program and erase algorithms
摘要 Structures and methods for controlling operation of a programmable impedance element are disclosed herein. In one embodiment, a method of controlling a programmable impedance element can include: (i) receiving a program or erase command to be executed on the programmable impedance element; (ii) selecting an operation algorithm for executing the command, where the operation algorithm is selected from among a plurality of operation algorithms by decoding at least two bits stored in a register; (iii) determining, using the register, a plurality of option variables for the selected operation algorithm, where the option variables are used to set conditions for one or more of a plurality of program and erase operations of the selected operation algorithm; and (iv) executing the command on the programmable impedance element by performing the one or more of the plurality of program and erase operations of the selected operation algorithm.
申请公布号 US8659954(B1) 申请公布日期 2014.02.25
申请号 US201213548470 申请日期 2012.07.13
申请人 LEWIS DERRIC;HOLLMER SHANE;GOPALAKRISHNAN VASUDEVAN;DINH JOHN;KOUSHAN FOROOZAN SARAH;ECHEVERRY JUAN PABLO SAENZ;ADESTO TECHNOLOGIES CORPORATION 发明人 LEWIS DERRIC;HOLLMER SHANE;GOPALAKRISHNAN VASUDEVAN;DINH JOHN;KOUSHAN FOROOZAN SARAH;ECHEVERRY JUAN PABLO SAENZ
分类号 G11C7/00 主分类号 G11C7/00
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