发明名称 Semiconductor device substrate and semiconductor device
摘要 There is provided a semiconductor device substrate including: a multi-layer wiring layer; a first capacitor pad which is provided on an uppermost layer of the multi-layer wiring layer, and which includes a first power supply pad connected to a power supply layer of the multi-layer wiring layer through a first via and a first ground pad connected to a ground layer of the multi-layer wiring layer through a second via; and a second capacitor pad which is provided on the uppermost layer of the multi-layer wiring layer, and which includes a second power supply pad connected to the first power supply pad through a first wire and a second ground pad connected to the first ground pad through a second wire.
申请公布号 US8659120(B2) 申请公布日期 2014.02.25
申请号 US201113173907 申请日期 2011.06.30
申请人 IKEMOTO YOSHIHIKO;KIKUCHI ATSUSHI;FUJITSU SEMICONDUCTOR LIMITED 发明人 IKEMOTO YOSHIHIKO;KIKUCHI ATSUSHI
分类号 H01L29/02;H01L23/48 主分类号 H01L29/02
代理机构 代理人
主权项
地址