发明名称 |
Semiconductor device substrate and semiconductor device |
摘要 |
There is provided a semiconductor device substrate including: a multi-layer wiring layer; a first capacitor pad which is provided on an uppermost layer of the multi-layer wiring layer, and which includes a first power supply pad connected to a power supply layer of the multi-layer wiring layer through a first via and a first ground pad connected to a ground layer of the multi-layer wiring layer through a second via; and a second capacitor pad which is provided on the uppermost layer of the multi-layer wiring layer, and which includes a second power supply pad connected to the first power supply pad through a first wire and a second ground pad connected to the first ground pad through a second wire. |
申请公布号 |
US8659120(B2) |
申请公布日期 |
2014.02.25 |
申请号 |
US201113173907 |
申请日期 |
2011.06.30 |
申请人 |
IKEMOTO YOSHIHIKO;KIKUCHI ATSUSHI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
IKEMOTO YOSHIHIKO;KIKUCHI ATSUSHI |
分类号 |
H01L29/02;H01L23/48 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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