| 摘要 |
A microelectronic pressure sensor comprises a DC source, two resistors, a capacitor, a global bus two output terminals, the following elements are incorporated: a two-drain strain-sensitive field-effect transistor, a two-gate field-effect transistor, an inductance; a first drain of two-drain strain-sensitive field-effect transistor forms a first output terminal, a second lead of first resistor is connected to a first pole of DC voltage source, a substrate of two-drain strain-sensitive field-effect transistor is connected to the drain thereof, the second pole of DC voltage source is connected to the global bus being grounded; first and second gates of two-drain strain-sensitive field-effect transistor are connected to the first terminals of first and second resistors correspondingly, the substrate of two-gate field-effect transistor is connected to the drain thereof and drain of two-drain strain-sensitive field-effect transistor. The first drain of two-gate field-effect transistor is connected to the first drain of two-drain strain-sensitive field-effect transistor and first lead of inductance, first lead of which is connected to the second lead of first resistor, first lead of capacitor and first pole of DC voltage source, the second drain of two-drain strain-sensitive field-effect transistor is united with the second gate of two-gate field-effect transistor, whose drain is connected to the second leads of second resistor and capacitor and connected to the global bus, to which the second output terminal is connected. |
