METHOD FOR FABRICATING BACK CONTACT TYPE HETERO-JUNCTION SOLAR CELL

摘要

The present invention relates to a method for fabricating a back-side electrode type heterojunction solar cell, capable of reducing the number of chemical vapor deposition processes by forming an n-type region using a laser process and capable of minimizing the possibility of contamination of an amorphous silicon layer and a silicon substrate. The method for fabricating the back-side electrode type heterojunction solar cell comprises: a step of preparing an n-type crystalline silicon substrate; a step of successively depositing an intrinsic amorphous semiconductor layer (i), a p-type amorphous semiconductor layer (p) and a transparent conductive oxide film on the back side of the substrate; a step of etching and removing the intrinsic amorphous semiconductor layer, p-type amorphous semiconductor layer and transparent conductive oxide film in an n-doped region wherein the back-side of the substrate comprises a p-doped region and an n-type doped region alternately arranged thereon; a step of forming an n-type region by diffusing n-type impurity ions by irradiating a part inside the substrate where an n-type region is to be formed; and a step of forming a p-type electrode on the transparent conductive oxide film of the p-type region and forming an n-type electrode on the n-type region. [Reference numerals] (S101) Prepare an n-type crystalline silicon substrate; (S102) Texturing; (S103) Successively deposit an intrinsic amorphous semiconductor layer (i), a p-type amorphous semiconductor layer (p) and a transparent conductive oxide film on the back side of the substrate; (S104) Etch-remove the intrinsic amorphous semiconductor layer (i), p-type amorphous semiconductor layer (p) and transparent conductive oxide film on the n-type doped region; (S105) Form an n-type doped region through LCP process or dopant paste-laser irrdiation process; (S106) Form a p-type electrode and an n-type electrode