发明名称 |
Crystal growth method and semiconductor light emitting device |
摘要 |
According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1@x<0.5) and has a thickness of not smaller than 20 nanometers and not larger than 50 nanometers. In addition, the method can include growing the crystal including a nitride semiconductor on the buffer layer at a temperature higher than a temperature of the substrate in the depositing the buffer layer. |
申请公布号 |
US8658450(B2) |
申请公布日期 |
2014.02.25 |
申请号 |
US20100875560 |
申请日期 |
2010.09.03 |
申请人 |
NAGO HAJIME;TACHIBANA KOICHI;HIKOSAKA TOSHIKI;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAGO HAJIME;TACHIBANA KOICHI;HIKOSAKA TOSHIKI;NUNOUE SHINYA |
分类号 |
H01L21/00;H01L21/20 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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