发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A gate trench 13 is formed in a semiconductor substrate 10. The gate trench 13 is provided with a gate electrode 16 formed over a gate insulating film 14. A portion of the gate electrode 16 protrudes from the semiconductor substrate 10, and a sidewall 24 is formed over a side wall portion of the protruding portion. A body trench 25 is formed in alignment with an adjacent gate electrode 16. A cobalt silicide film 28 is formed over a surface of the gate electrode 16 and over a surface of the body trench 25. A plug 34 is formed using an SAC technique. |
申请公布号 |
US8659078(B2) |
申请公布日期 |
2014.02.25 |
申请号 |
US201313792134 |
申请日期 |
2013.03.10 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
MATSUURA HITOSHI;NAKAZAWA YOSHITO;KACHI TSUYOSHI;YATSUDA YUJI |
分类号 |
H01L27/108;H01L29/78 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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