| 摘要 |
A photoelectric conversion film stack-type solid-state imaging device includes a semiconductor substrate, a photoelectric conversion layer, a photoelectric conversion layer, and a conductive light shield film. A signal reading portion is formed on the semiconductor substrate. The photoelectric conversion layer is stacked above the semiconductor substrate and includes a photoelectric conversion film formed between a first electrode film and a second electrode films which is divided into a plurality of regions corresponding to pixels respectively. The first light transmission layer is stacked above the light incidence side of the photoelectric conversion layer and made of a material that transmits light at least partially. The conductive light shield film is formed in the same layer level as the first light transmission layer and covers an outside of an effective pixel region. |
