发明名称 |
Nitride semiconductor crystal with surface texture |
摘要 |
A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range. |
申请公布号 |
US8658440(B2) |
申请公布日期 |
2014.02.25 |
申请号 |
US201113311644 |
申请日期 |
2011.12.06 |
申请人 |
LIANG JI-HAO;TSUCHIYA MASAHIKO;CHINONE TAKAKO;KAJIKAWA MASATAKA;STANLEY ELECTRIC CO., LTD. |
发明人 |
LIANG JI-HAO;TSUCHIYA MASAHIKO;CHINONE TAKAKO;KAJIKAWA MASATAKA |
分类号 |
H01L21/00;H01L33/06;H01L33/00;H01L33/24;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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