发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can suppress the occurrence and progress of cracks in a substrate.SOLUTION: A semiconductor device according to the present invention comprises: a substrate 12 on which a device 14 is formed or mounted on the surface; a back electrode 20 which is formed on the rear surface of the substrate 12 and has a compression stress; and a stress relaxation layer 18 which is formed on the surface of the substrate 12 so as to surround the device 14 and has a compression stress.
申请公布号 JP2014036201(A) 申请公布日期 2014.02.24
申请号 JP20120178282 申请日期 2012.08.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 HASUIKE ATSUSHI
分类号 H01L23/12;H01L21/301 主分类号 H01L23/12
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