| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable non-volatile semiconductor memory.SOLUTION: A non-volatile semiconductor memory includes: a plurality of blocks each of which has a plurality of memory cells; a plurality of bit lines; a plurality of sense amplifier circuits each of which has a first transistor; a plurality of second transistors arranged at positions close to the sense amplifier circuits of the plurality of bit lines, and connected to each of the plurality of bit lines; a plurality of third transistors arranged at positions far from the sense amplifier circuits of the plurality of bit lines, and connected to each of the plurality of bit lines; a source line; and a control circuit. The control circuit changes a voltage to be applied to the control line of the plurality of first transistors on the basis of a trimming voltage by which currents flowing in the control line to the plurality of second transistors and the plurality of third transistors are made the same when a first voltage is applied to the bit lines in accordance with the position of the selected block in which the plurality of selected memory cells are arranged. |
