| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for simply obtaining nitrogen concentration in a CZ silicon single crystal when oxygen concentration is low.SOLUTION: In a method for evaluating nitrogen concentration in a nitrogen-doped silicon simple crystal created in the Czochralski method, when the silicon simple crystal is created, a silicon simple crystal having a low oxygen concentration region with an oxygen concentration of 6.0×10atoms/cmor less is created, a peak derived from a NN pair is detected by an infrared absorption spectroscopic method relative to the silicon simple crystal in the low oxygen concentration region, and nitrogen concentration is evaluated on the basis of the detection result. |
