| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a diamond that may maintain a stable growth rate of the diamond and produces a high quality diamond.SOLUTION: A method for producing a diamond is provided in which the diamond is grown on a substrate S using a mixed gas of a carbon-containing gas and a hydrogen gas as a raw material by a direct current plasma CVD method applying a DC voltage between a stage electrode 12 holding the substrate S and a voltage application electrode 13. A single pulse voltage having reverse polarity to the polarity of the DC voltage for growing the diamond is applied between the stage electrode 12 and the voltage application electrode 13 at a specific timing while the diamond is grown by applying the DC current for growing the diamond. |
