| 摘要 |
PROBLEM TO BE SOLVED: To provide an ESD protection element structure capable of having the same element structure as an internal circuit and is excellent in circuit protection capability.SOLUTION: An ESD protection element structure 1 includes: a well region 11 formed on a semiconductor substrate 50; a source region 12, a drain region 13, and a back-gate region 14 formed in the well region 11; a gate region 16 provided between the source region 12 and the drain region 13 via an insulating film 15; a first electrode 17 connecting the source region 12, the gate region 16, and the back-gate region 14 to one another and connecting them to a high-potential side; and a second electrode 18 connecting the drain region 13 to a low-potential side. |
