| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of easily controlling a height and a width of a schottky barrier regardless of the kind of metal material, having low parasitic resistance and effectively suppressing short channel effect, and a method for manufacturing the same.SOLUTION: A gate electrode 3 is formed on a p-type silicon substrate 1 via a gate insulating film 2, and metal source drain electrodes 8 are formed on both sides of the gate electrode 3 on the p-type silicon substrate 1. An silicon oxide layer 4 is formed on a part between the gate electrode 3 and the metal source drain electrode 8 on the p-type silicon substrate 1. A cesium-containing region containing cesium for modulating Schottky barrier is formed on a region contacting with the metal source drain electrodes 8 on the p-type silicon substrate 1. Fixed charges exist in the silicon oxide layer 4. |
