发明名称 THROUGH SILICON VIA GUARD RING
摘要 The present disclosure relates to forming a plurality of through silicon vias guard rings proximate the scribes streets of a microelectronic device wafer. The microelectronic device wafer includes a substrate wherein the through silicon via guard ring is fabricated by forming vias extending completely through the substrate. The through silicon via guard rings act as crack arresters, such that defects caused by cracks resulting from the dicing of the microelectronic wafer are substantially reduced or eliminated.
申请公布号 KR101366949(B1) 申请公布日期 2014.02.24
申请号 KR20127013425 申请日期 2009.11.25
申请人 发明人
分类号 H01L21/301;H01L23/48 主分类号 H01L21/301
代理机构 代理人
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