| 摘要 |
PROBLEM TO BE SOLVED: To enhance the reliability and improve the manufacturing yield.SOLUTION: A nonvolatile semiconductor memory device according to an embodiment comprises: a plurality of first semiconductor regions; a plurality of control gate electrodes provided on an upper side of the plurality of first semiconductor regions; a charge storage layer provided at positions where the respective first semiconductor regions and the respective control gate electrodes cross each other; a first gate insulating film; a second gate insulating film; and an element isolation region provided between the respective first semiconductor regions, and contacted with the first gate insulating film and the charge storage layer. The element isolation region comprises a first element isolation part, and a second element isolation part provided on a lower side of the first element isolation part. A width of the second element isolation part in a second direction at positions where the first element isolation part and the second element isolation part are connected, is narrower than that of the first element isolation part in the second direction at the position. |
