SAPPHIRE SUBSTRATE FOR GROWING GALLIUM NITRIDE CRYSTAL, MANUFACTURING METHOD OF GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a sapphire substrate for growing gallium nitride crystals that achieves lower dislocation of gallium nitride crystals and higher quality of the gallium nitride crystals compared with a conventional one, a manufacturing method of gallium nitride crystals, and the gallium nitride crystals.SOLUTION: A sapphire substrate 10 for growing gallium nitride crystals has a plurality of tiny saliences 12 formed on a C face of a sapphire substrate 11. Regions 13 are located within an angle of ± 10° from a reference plane that tilts at an angle of 43.2° from the C face in a direction of an axis (a) of the sapphire substrate 11. The regions 13 occupy an area of 5% or more of a surface area of the tiny salience 12. The gallium nitride crystals are grown on the sapphire substrate 10.