| 摘要 |
<p>The present invention relates to a power semiconductor device. The present invention includes a second gate area which connects first gate areas; a third gate area connected to a gate electrode; and one or more first gate connection units connecting the first gate area and the third gate area. The total area of the first gate connection unit is smaller than the second gate area and the third gate area. According to the present invention, a structure having bigger resistance value than the gate area is formed in the gate area so that a voltage change inclination between a gate and a source is gradual, and the voltage change inclination between the gate on the output side and source can be gradual.</p> |
