发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a single-wafer processing substrate processing apparatus and a substrate processing method which can successfully remove a resist from a substrate by supplying peroxodisulfuric acid-rich sulfuric ozone to a substrate.SOLUTION: A substrate processing apparatus 1 is a single-wafer processing apparatus used for removing a resist from a surface of a wafer W. The substrate processing apparatus 1 comprises: a sulfuric ozone/water nozzle 5 for discharging sulfuric ozone/water toward the surface of the wafer W held by a spin chuck 4; a water mix part 15 for mixing sulfuric ozone and water; a sulfuric ozone supply part 3 for supplying sulfuric nozzle to the mix part; and sulfuric ozone/water supply pipe 16 for supplying sulfuric ozone/water mixed by the water mix part 15 to the sulfuric ozone/water nozzle 5.
申请公布号 JP2014036101(A) 申请公布日期 2014.02.24
申请号 JP20120176233 申请日期 2012.08.08
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 IWATA KEIJI;TSUJIKAWA HIROTAKA;TSUDA SHOTARO;ANO SEIJI
分类号 H01L21/027;H01L21/304 主分类号 H01L21/027
代理机构 代理人
主权项
地址