发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a single-wafer processing substrate processing apparatus and a substrate processing method which can successfully remove a resist from a substrate by supplying peroxodisulfuric acid-rich sulfuric ozone to a substrate.SOLUTION: A substrate processing apparatus 1 is a single-wafer processing apparatus used for removing a resist from a surface of a wafer W. The substrate processing apparatus 1 comprises: a sulfuric ozone/water nozzle 5 for discharging sulfuric ozone/water toward the surface of the wafer W held by a spin chuck 4; a water mix part 15 for mixing sulfuric ozone and water; a sulfuric ozone supply part 3 for supplying sulfuric nozzle to the mix part; and sulfuric ozone/water supply pipe 16 for supplying sulfuric ozone/water mixed by the water mix part 15 to the sulfuric ozone/water nozzle 5. |
申请公布号 |
JP2014036101(A) |
申请公布日期 |
2014.02.24 |
申请号 |
JP20120176233 |
申请日期 |
2012.08.08 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
IWATA KEIJI;TSUJIKAWA HIROTAKA;TSUDA SHOTARO;ANO SEIJI |
分类号 |
H01L21/027;H01L21/304 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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