| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target in which a crack hardly occurs and which enables a film suitable for a MoSe layer for use in a CIGS thin-film solar cell, a solid lubrication film and the like to be sputtered, and to provide a method for manufacturing the sputtering target.SOLUTION: The sputtering target has a component composition containing Se: 57 to 68 wt% and the balance consisting of Mo and inevitable impurities and a structure including a first phase consisting of MoSeand a second phase consisting of at least one of MoSe,Mo and Se. The method for manufacturing the sputtering target comprises a process in which a compact made of mixed powder of Mo powder and Se powder is sintered under pressurized condition or normal pressure in vacuum, an inert gas or a reducing atmosphere. |
