| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor wafer made of single crystal silicon capable of reliably maintaining high gettering efficiency of a silicon semiconductor wafer even after the semiconductor wafer is stored for a comparatively long time, and a manufacturing method thereof.SOLUTION: A semiconductor wafer includes a zone DZ not having BMD defects and extending in a bulk of a semiconductor wafer from a front side of the semiconductor wafer, and a region further extending to the bulk of the semiconductor wafer from the zone DZ and having BMD defects. The method includes: a step of drawing silicon single crystals by a Czochralski method; a step of processing the single crystals to form a polished substrate wafer made of silicon; a step of rapidly heating and cooling the substrate wafer; a step of slowly heating the rapidly heated and cooled substrate; and a step of maintaining the substrate wafer for a predetermined period at predetermined temperature. |
