发明名称 SUBSTRATE CLEANING LIQUID FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD OF SUBSTRATE FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a cleaning liquid used in a cleaning step following to a CMP step of a substrate for semiconductor device, especially a substrate for semiconductor device having metal wiring on the surface, exhibiting sufficient anticorrosion properties for the metal wiring, and capable of suppressing generation of residue and adhesion of residue to the substrate surface.SOLUTION: A substrate cleaning liquid for semiconductor device contains following components (A)-(E), and has pH of 10 or more. (A) An organic quaternary ammonium hydroxide represented by following general formula (1). (R)NOH...(1) (Ris hydroxyl, alkoxy group, or alkyl group which may be replaced by halogen. Four Rs may be identical or different, excepting when all Rs are methyl groups.) (B) A surfactant. (C) A chelator. (D) An amino-acid having an aromatic ring in the side-chain. (E) Water.
申请公布号 JP2014036136(A) 申请公布日期 2014.02.24
申请号 JP20120176973 申请日期 2012.08.09
申请人 MITSUBISHI CHEMICALS CORP 发明人 HARADA KEN;ITO ATSUSHI;SUZUKI TOSHIYUKI
分类号 H01L21/304 主分类号 H01L21/304
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