| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit temperature rise of a surface opposite to one surface in activation of an impurity performed by laser beams irradiation on the one surface.SOLUTION: A semiconductor device manufacturing method comprises: making a first laser pulse with a first pulse width emitted from a semiconductor laser oscillator enter a second surface of a semiconductor substrate in which a semiconductor element is formed on a first surface and an impurity is added to a surface layer part on the second surface side; and making a second laser pulse with a second pulse width not greater than one-tenth of the first pulse width enter an incident region of the first laser pulse in an overlapping manner. A relative position between a fall time of the first laser pulse and a rise time of the second laser pulse on an a temporal axis is set such that a temperature of the first surface where the temperature rises due to incidence of the first laser pulse and the second laser pulse does not exceed a predetermined allowable upper limit. |
