| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element utilizing a semiconductor buffer structure, in which a nitride-based semiconductor thin film grown on a silicon substrate has high crystallinity and which can reduce the occurrence of cracks.SOLUTION: A semiconductor element manufacturing method comprises: a step of forming on a silicon substrate, a buffer layer including a first layer which contains AlInGaN (0≤x≤1, 0≤y≤1, 0≤x+y≤1) and has a lattice constant LP1 smaller than a lattice constant LP0 of the silicon substrate, a second layer which is formed on the first layer and contains AlInGaN (0≤x<1, 0≤y<1, 0≤x+y<1) and has a lattice constant LP2 larger than LP1 and smaller than LP0, and a third layer which is formed on the second layer and contains AlInGaN (0≤x<1, 0≤y<1, 0≤x+y<1) and has a lattice constant LP3 smaller than LP2; and a step of forming a nitride semiconductor layer on the buffer layer. |
