发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To achieve low power consumption while addressing destabilizing factors of the operation of a semiconductor memory device.SOLUTION: A semiconductor memory device 1 includes: an operation environment information storage unit 11 that stores a memory characteristic holding unit 16 indicating a correspondence relation between the operation environment and data error rate of a first memory unit 22; a first error correction unit 20 and second error correction unit 30 that correct in stages bit errors of data on the basis of the data that is stored in the first memory unit 22; an error rate estimation unit 12 that compares each of parameters, which are held in an access count holding unit 17, temperature information holding unit 18, and data holding period holding unit 19, with the memory characteristic holding unit 16, and estimates the error rate of memory data to be accessed; and a power supply control unit 13 that controls power supply to the second error correction unit 30 according to error correction stages on the basis of the estimated error rate.
申请公布号 JP2014035673(A) 申请公布日期 2014.02.24
申请号 JP20120177009 申请日期 2012.08.09
申请人 RENESAS ELECTRONICS CORP 发明人 KURATA MAMORU
分类号 G06F12/16 主分类号 G06F12/16
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