| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the spread of an etching chemical solution when removing a mask film covering a top face of a semiconductor pillar by wet etching to stabilize a residual quantity of the mask film.SOLUTION: A semiconductor device manufacturing method comprises the processes of: forming a semiconductor pillar 5 provided in an active region of a semiconductor substrate, insulation layer pillars 45 provided in an element isolation region which surrounds the active region and a first mask film 23 which covers at least a top face of the semiconductor pillar 5; forming a gate insulation film 10 which covers lateral faces of the semiconductor pillar 5; forming gate electrodes 11A, 11B which cover the lateral faces of the semiconductor pillar 5 via the gate insulation film 10; forming an interlayer insulation film 12 which covers the gate electrodes 11A, 11B; and removing the first mask film 23 by wet etching. In the wet etching process, the spread of an etching solution is inhibited by the insulation layer pillars 45 which are made of a material different from that of the first mask film 23 and which serve as etching protection barriers surrounding the first mask film. |
