| 摘要 |
The present invention provides a method for manufacturing a semiconductor device, a substrate processing device, and a recording medium which are capable of suppressing the degradation of a film forming rate when forming a thin film containing predetermined elements, oxygen, carbon, and nitrogen at a low temperature area. The method for manufacturing a semiconductor device according to an embodiment of the present invention comprises: a step for supplying gas containing the predetermined elements to a substrate; a step for supplying gas containing carbon to the substrate; a step for supplying oxidizing gas to the substrate; and a step for forming a thin film containing the predetermined elements, oxygen, carbon and nitrogen on the substrate by performing a predetermined number of cycles including the step for supplying nitriding gas to the substrate. In the step for forming the thin film, the process for supplying the nitriding gas is performed before performing the process for supplying the gas containing the predetermined elements and the processes for supplying the gas containing the carbon and oxide gas are not performed until performing the process for supplying the gas containing the predetermined elements after performing the process for supplying the nitriding gas. [Reference numerals] (AA) Silicon including gas(HCDS); (BB) Carbon including gas(C_3H_6); (CC) Nitriding gas(NH_3); (DD) Oxidizing gas(O_2); (EE) Inert gas(N_2) |
