发明名称 IC IN-PROCESS SOLUTION TO REDUCE THERMAL NEUTRONS SOFT ERROR RATE
摘要 <p>Integrated Circuits and methods for reducing thermal neutron soft error rate (SER) of a digital circuit are provided by doping a protection layer on top of the metal layer and in physical contact with the metal layer of the digital circuit, wherein the protection layer is doped with additional thermal neutron absorbing material. The thermal neutron absorbing material can be selected from the group consisting of Gd, Sm, Cd, B, and combinations thereof. The protection layer may comprise a plurality of sub-layers among which a plurality of them containing additional thermal neutron absorbing material.</p>
申请公布号 KR101365859(B1) 申请公布日期 2014.02.21
申请号 KR20120006608 申请日期 2012.01.20
申请人 发明人
分类号 H01L21/8238 主分类号 H01L21/8238
代理机构 代理人
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